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DMN1019UFDE
1
0.1
0.01
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
R ? JA(t) (t) * R ? JA
D = 0.005
=r
R ? JA = 178 ? C/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01 0.1 1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
12
—
—
—
—
—
—
1
±2
V
μA
μA
V GS = 0V, I D = 250 μ A
V DS = 12V, V GS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
0.35
—
0.8
V
V DS = V GS , I D = 250 μ A
7
8
10
12
V GS = 4.5V, I D = 9.7A
V GS = 2.5V, I D = 9A
Static Drain-Source On-Resistance
R DS (ON)
—
10
14
m ?
V GS = 1.8V, I D = 8.1A
14
28
18
41
V GS = 1.5V, I D = 4.5A
V GS = 1.2V, I D = 2.4A
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
—
—
28
0.8
—
1.2
S
V
V DS = 4V, I D = 9.7A
V GS = 0V, I S = 10A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 8V)
Total Gate Charge (V GS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
—
—
2425
396
375
1.1
50.6
27.3
3.4
5.2
7.6
22.2
57.6
16.8
—
—
—
—
—
—
—
—
—
—
—
—
pF
?
nC
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V DS = 4V, I D = 10A
V DD = 4V, V GS = 10V, I D = 10A
R G = 1 ? , R L = 0.4 ?
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN1019UFDE
D atasheet number: DS35561 Rev. 5 - 2
3 of 7
www.diodes.com
October 2013
? Diodes Incorporated
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